Opening Session 9:30-10:00 (Chair: S. Arai)

Session A 10:00-12:00 (Chair: J. Jewell and K. Kobayashi)

A-1

L. A. Coldren (University of California, Santa Barbara, USA)
High-efficiency epitaxial VCSEL technology

A-2

K. J. Ebeling (Ulm University, Germany)
Low noise high speed VCSELs and arrays for optical interconnects

A-3

P. D. Dapkus (University of Southern California, USA)
VCSELs and microcavities for parallel processing

A-4

D. G. Deppe (University of Texas at Austin, USA) Vertical cavity surface emitting lasers (VCSELs) and arrays

Session B 13:30-15:30 (Chair: L. A. Coldren and Y. H. Lee)

B-1

Y. Arakawa (University of Tokyo, Japan)
Progress in quantum dots for optoelectronics devices

B-2

M. Osinski (University of New Mexico, USA)
Design of InGaN/GaN/AlGaN VCSELs using the effective frequency method

B-3

N. Ueki, H. Nakayama, J. Sakurai, A. Murakami, H. Otoma, Y. Miyamoto, M. Yamamoto, R. Ishii, M. Yoshikawa, and T. Nakamura (Fuji Xerox, Japan)
Fabrication and property of large scale 2-D VCSEL array

B-4

C. Chang-Hasnain (University of California, Berkeley, Bandwidth9, USA)
Wavelength-engineering in VCSELs

Session C 16:00-18:00 (Chair: Y. Arakawa and K. D. Choquette)

C-1

Y. H. Lee (KAIST, Korea)
2-dimensional photonic bandgap nano-laser

C-2

S. Arai, N. Nunoya, M. Nakamura, H. Yasumoto, and S. Tamura (Tokyo Institute of Technology, Japan)
1.5 µm wavelength GaInAsP/InP low threshold current lasers by low-damage CH₄/H₂-RIE and OMVPE regrowth

C-3

T. Baba, M. Fujita, and A. Sakai (Yokohama National University, Japan)
Microdisk-based photonics

C-4

C-4 M. Wu (University of California, Los Angels, USA)
Micromechanical photonic integrated circuits

February 4 (Friday)

Session D 9:00-10:30 (Chair: D. G. Deppe and M. Wu)

D-1

N. Yokouchi and A. Kasukawa (Furukawa Electric, Japan)
850nm-VCSELs for high speed datacom applications

D-2

K. D. Choquette (Sandia National Laboratory, USA)
High performance 2-dimensional VCSEL arrays for interconnect and imaging applications

D-3

K. Takaoka, M. Ishikawa, and G. Hatakoshi (Toshiba, Japan)
InGaAlP-based red VCSELs for high-speed POF data links

Session E 11:00-12:30 (Chair: P. D. Dapkus and M. Osinski)

E-1

C. Amano, T. Kagawa, H. Uenohara, K. Tateno, O. Tadanaga, T. Nakahara, H. Tsuda, and Y. Ohiso (NTT, Japan)
Recent activities for VCSELs and related studies in NTT Labs.

E-2

M. Kondow, T. Kitatani, and T. Tanaka (RWCP Hitachi Lab., Japan)
GaInNAs for VCSELs

E-3

T. Anan, M. Yamada, K. Kurihara, K. Nishi, K. Tokutome*, A. Kamei, and S. Sugou (RWCP NEC Lab., Japan)
GaAsSb-based long-wavelength VCSELs

Session F 14:00-15:30 (Chair: K. J. Ebeling and C. J. Chang-Hasnain)

F-1

J. Jewell (PicoLight, USA)
High-performance commercial VCSELs

F-2

H. K. Shin (Opticis Corp., Korea)
Optical interface using VCSEL array

F-3

K. Iga (Tokyo Institute of Technology, Japan)
Surface emitting laser -its past, present and future-

Poster Session G 16:00-18:00

Wide-gap Materials and Visible LEDs

P-1

M. Iwata, T. Sakaguchi, Y. Moriguchi, Y. Uchida, T. Miyamoto, F. Koyama, and K. Iga (Tokyo Inst. of Tech., Japan)
GaInN multiquantum wells with AlGaN barriers

P-2

Y. Moriguchi, T. Miyamoto, T. Sakaguchi, M. Iwata, Y. Uchida, F. Koyama, and K. Iga (Tokyo Inst. of Tech., Japan)
GaN polycrystal light emitter grown on Silica substrate by metalorganic vapor phase epitaxy (MOVPE)

P-3

Y. Ishihara, J. Yamamoto, M. Kurimoto, T. Takano, T. Honda, and H. Kawanishi (Kohgakuin University, Japan)
Relationship between XRD peak and residual strain in AlN grown on (0001)6H-SiC by MOVPE

P-4

M. Kurimoto, K. Suzuki, Y. Ishihara, J. Yamamoto, T. Takano, T. Honda, and H. Kawanishi (Kohgakuin University, Japan)
Composition fluctuation in AlGaN layers grown by low-pressure metal-organic vapor phase epitaxy

P-5

N. Nakada, M. Nakaji, H. Ishikawa, T. Egawa, T. Jimbo, and M. Umeno (Nagoya Institute of Technology, Japan)
InGaN light emitting diode with GaN/AlGaN distributed Bragg reflector

P-6

T. Takada, I. Nomura, S. Che, A. Kikuchi, K. Shimomura, and K. Kishino (Sophia University, Japan)
Application of Wide-gap and high-p-dopable BeZnTe II-VI compounds on InP substrates for visible light emitting diodes as p-cladding layers

GaAs-based VCSELs

P-7

N. Nishiyama, S. Shinada, M. Arai, F. Koyama and K. Iga (Tokyo Inst. of Tech., Japan)
Single mode and stable polarization GaInAs/GaAs surface emitting laser grown on GaAs (311)B substrate

P-8

Y. Kaneko, D. E. Mars, S. Nakagawa, Y. Ichimura, T. Takeuchi, and N. Yamada (Agilent Laboratories, Japan)
Comparisons for vertical-cavity surface-emitting lasers grown on (311)B and (411)A GaAs substrates

P-9

W.-Y. Cho, K.-H. Ha, S. Kim, and W.-L. Hwang (Samsung Electronics, Korea)
Continuous wave operation of 650 nm AlGaInP vertical cavity surface emitting lasers

P-10

O. Tadanaga, K. Tateno, H. Uenohara, T. Kagawa and C. Amano (NTT, Japan)
Polarization characteristics of 850 nm InAlGaAs strained quantum-well vertical cavity surface emitting lasers grown on GaAs (311)B substrates

Novel Long Wavelength Materials and Lasers

P-11

D. Schlenker, Z. Chen, M. Kawaguchi, T. Kondo, E. Gouardes, T. Miyamoto, F. Koyama, and K. Iga (Tokyo Inst. of Tech., Japan)
1.2 µm highly strained GaInAs-GaAs quantum well lasers

P-12

S. Sato (Ricoh, Japan)
High-performance 1.3 µm range GaInNAs lasers grown by MOCVD

P-13

T. Kageyama, T. Miyamoto, S. Makino, N. Nishiyama, F. Koyama, and K. Iga (Tokyo Inst. of Tech., Japan)
GaInNAs/GaAs Quantum well lasers grown by chemical beam epitaxy

P-14

M. Takahashi, A. Moto, S. Tanaka, T. Tanabe, S. Takagishi, T. Katsuyama, and A. Ishida (Sumitomo Electric, Japan)
Temperature characteristics of GaInNAs/GaAs quantum well lasers

P-15

S. Makino, T. Miyamoto, T. Kageyama, F. Koyama, and K. Iga (Tokyo Inst. of Tech., Japan)
Self-assembled GaInNAs/GaAs quantum dots grown by chemical beam epitaxy

P-16

S. Sekiguchi, T. Kimura, G. Okazaki, T. Miyamoto, F. Koyama and K. Iga (Tokyo Inst. of Tech., Japan)
Tunnel junction for long wavelength VCSELs

Micro-Fabrication and Nano-structure Lasers

P-17

M. Raj, Y. Saka, J. Wiedmann, S. Tamura, and S. Arai (Tokyo Inst. of Tech., Japan)
Low threshold 1.5 µm wavelength GaInAsP/InP lasers with semiconductor/Benzocyclobutene DBR structure

P-18

A. Matsutani, H. Ohtsuki*, F. Koyama and K. Iga (Tokyo Inst. of Tech., *Samco Int., Japan)
Vertical and smooth etching of InP and GaAs by low bias Cl₂ based inductively coupled plasma (ICP)

P-19

T. Kurobe, T. Mukaihara, N. Yamanaka, N. Iwai, and A. Kasukawa (Furukawa Electric, Japan)
CH₄/H₂ inductively coupled plasma etching for high performance GaInAsP Buried heterostructure lasers

P-20

S. Shinada, F. Koyama, N. Nishiyama, M. Arai, K. Goto*, and K. Iga (Tokyo Inst. of Tech., Tokai University, Japan)
Micro-aperture surface emitting laser for near field optical data storage

P-21

Y. Kim, K. Kurihara, and K. Goto (Tokai University, Japan)
Nano-aperture VCSEL array head for high density near-field optical memory system

P-22

K. Suzuki, F. Koyama, and K. Iga (Tokyo Inst. of Tech., Japan)
Finite element method analysis for semiconductor micro photonic devices

P-23

S. Mitsugi, Y. Kim and K. Goto (Tokai University)
Elementary analysis of tip-shaped near-field optical writing head for optical storage

Functional Photonic Devices and Micro-Optics

P-24

S. Ye, J. Ohtsubo*, and K. Goto (Tokai University, *Shizuoka University, Japan)
Experimental study of chaos control in a semiconductor laser with optical feedback

P-25

T. Yamatoya, S. Mori, F. Koyama, and K. Iga (Tokyo Inst. of Tech., Japan)
Spectrum-sliced multi-wavelength light sources

P-26

T. Amano, F. Koyama, N. Nishiyama, and K. Iga (Tokyo Inst. of Tech., Japan)
Temperature insensitive micromachined optical filter

P-27

H. Sasaki, K. Kotani, T. Takamori, and T. Ushikubo (RWCP Oki Lab., Oki Electric, Japan)
Diffractive optical element-based photonic circuit for inter-chip free-space optical interconnects

P-28

Y. Aoki, Y. Shimada, and K. Iga (Tokyo Inst. of Tech., Japan)
Fundamental design of 3-D optical interconnect subsystem using vertical cavity surface emitting lasers

Reception 18:30-20:00