Research Facilities
MOCVD

Metalorganic vapor phase epitaxy system for AlGaAs and InGaAs alloys on off-angle GaAs substrate for high performance surface emitting lasers.
MOCVD

Metalorganic chemical vapor phase epitaxy system for the growth of (I) GaInAsP and AlGaInAs, (II) GaInNAs and AlGaAs for use in light emitting devices such as VCSELs.
MBE

Ultra-high vacuum epitaxial growth system equipped with radical nitrogen source, surface analyze system for the growth of GaInNAs and quantum dots.
XRD

Four crystal X-ray diffraction system
PL

Photoluminescence mapping system
C-V

Carrier density profiling system
Sputter

Full-automatic sputtering system for the formation of electrical insulator material, such as SiO2, for optoelectric devices.
ICP

Dry etching system based on inductively coupled plasma for micro-fine patterns and smooth vertical walls of lightwave integrated circuits and optical devices.
EB Evaporation

Oxidation

Self-designed AlAs selective oxidation system for fabricating current confinement in VCSELs.
Photo-lithography

EB-lithography

Electron beam lithography system for ultra-fine patterning.
Robonano

NC machine for nano-scale structure fabrication using lathe with five super precision axes.
FIB

Ellipsometer

AFM

Atomic force scanning microscope (AFM) for observing quantum dots, epitaxial surface and micro-apertures.
SEM

VCSEL measurement

Laser characterization system for 2-dimensional VCSEL array.
BER

High speed (up to 40Gb/sec) bit error rate measuring system for lightwave communication.
Optical network analyzer

The optical network analyzer is used for measuring chromatic dispersion of an optical filter and a dispersion compensator consisting of a waveguide, dielectric multilayer, and so on.

Copyright (C) 2011 Koyama, Uenohara, Miyamoto Lab. All rights reserved.